Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices

DOI10.1002/JNM.623MaRDI QIDQ3418211zbMATH OpenOpenAlexFDO

Authors J. J. Pombo, A. J. García-Loureiro, Manuel Aldegunde

Publication date 2 February 2007

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.623

zbMATH Keywords

tetrahedral meshmesh generationtemplatesemiconductor device simulationoctrees

Mathematics Subject Classification ID

Mesh generation, refinement, and adaptive methods for boundary value problems involving PDEs (65N50) Statistical mechanics of semiconductors (82D37)

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Cited in

(2)

• Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies
• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs

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• GiD

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