Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices

DOI10.1002/JNM.623zbMATH Open1104.82050OpenAlexW2075518905MaRDI QIDQ3418211FDOQ3418211

Manuel Aldegunde, J. J. Pombo, A. J. García-Loureiro

Publication date: 2 February 2007

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.623

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zbMATH Keywords

tetrahedral meshmesh generationtemplatesemiconductor device simulationoctrees

Mathematics Subject Classification ID

Mesh generation, refinement, and adaptive methods for boundary value problems involving PDEs (65N50) Statistical mechanics of semiconductors (82D37)

Cited In (2)

• Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies
• Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs

Uses Software

• GiD

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