UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS (Q3528995)
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scientific article; zbMATH DE number 5353458
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| English | UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS |
scientific article; zbMATH DE number 5353458 |
Statements
UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS (English)
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17 October 2008
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p-i-n photodiode
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double injection
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responsivity
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noises
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detectivity
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0.6655609011650085
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0.6511477828025818
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0.6146016120910645
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0.6069883108139038
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0.6001071333885193
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