UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS

DOI10.1142/S0217984908014870MaRDI QIDQ3528995zbMATH OpenOpenAlexFDO

Authors Ferdinand V. Gasparyan

Publication date 17 October 2008

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0217984908014870

zbMATH Keywords

noisesdouble injectiondetectivityp-i-n photodioderesponsivity

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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