UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS

DOI10.1142/S0217984908014870zbMATH Open1153.82352OpenAlexW2002510498MaRDI QIDQ3528995FDOQ3528995

Authors: Ferdinand V. Gasparyan 

Publication date: 17 October 2008

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984908014870

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zbMATH Keywords

noisesdouble injectiondetectivityp-i-n photodioderesponsivity

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cited In (3)

• Modeling the frequency response of p⁺InP/n⁻InGaAs/n⁺InP photodiodes with an arbitrary electric field profile
• Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes
• Hybrid drift‐diffusion–TLM analysis of high‐speed and high‐output UTC traveling‐wave photodetectors

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