A closed-form analytic model to study the characteristics of avalanche photodiodes

DOI10.1080/09500340802450607zbMATH Open1157.78312OpenAlexW1989638672MaRDI QIDQ3615098FDOQ3615098

Authors: S. Masudy-Panah, V. Ahmadi 

Publication date: 17 March 2009

Published in: Journal of Modern Optics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/09500340802450607

Recommendations

• Computational Science - ICCS 2004
• A Nonlinear Eigenvalue Problem Modelling the Avalanche Effect in Semiconductor Diodes
• scientific article; zbMATH DE number 1782840
• Modeling the frequency response of p⁺InP/n⁻InGaAs/n⁺InP photodiodes with an arbitrary electric field profile
• Mathematical model of the coordinate-sensitive photodetector with control electric field
• Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes
• scientific article; zbMATH DE number 988725
• Coarse Grid Finite Difference Solution of Maxwell's Equations for a Model of an Avalanche Photodischarge Device

zbMATH Keywords

excess noiseclosed form modelavalanche photodiodebreakdown electric fieldmean gain

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Motion of charged particles (78A35) Electron optics (78A15)

Cited In (4)

• Modeling the frequency response of p⁺InP/n⁻InGaAs/n⁺InP photodiodes with an arbitrary electric field profile
• Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes
• Computational Science - ICCS 2004
• UV p-i-n PHOTODIODES MADE ON WIDE BANDGAP SEMICONDUCTORS

This page was built for publication: A closed-form analytic model to study the characteristics of avalanche photodiodes

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3615098)