COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN <font>SiC</font> AND <font>GaN</font> STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING (Q3534083)
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scientific article; zbMATH DE number 5360530
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| English | COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN <font>SiC</font> AND <font>GaN</font> STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING |
scientific article; zbMATH DE number 5360530 |
Statements
COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN <font>SiC</font> AND <font>GaN</font> STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING (English)
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3 November 2008
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0.8390571475028992
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0.706391453742981
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0.7047596573829651
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0.6992210745811462
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