COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING

DOI10.1142/S0217984908015358MaRDI QIDQ3534083zbMATH OpenOpenAlexFDO

Authors M. Rezaee Rokn-Abadi, H. Arabshahi

Publication date 3 November 2008

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0217984908015358

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

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• COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD
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• scientific article; zbMATH DE number 2159210 (Why is no real title available?)
• Monte Carlo Simulation of GaN Diode Including Intercarrier Interactions

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