scientific article; zbMATH DE number 2159210

MaRDI QIDQ4667153zbMATH OpenFDO

Authors Giovanni Mascali

Publication date 19 April 2005

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Recommendations

• High field mobility and diffusivity of an electron gas in silicon devices
• COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING
• High field approximations of the spherical harmonics expansion model for semiconductors
• scientific article; zbMATH DE number 5208534
• LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION

Cited in

(1)

• COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING

This page was built for publication:

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4667153)