Novel low-voltage BiCMOS digital circuits employing a lateral p-n-p BJT in a p-MOS structure (Q4331630)
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scientific article; zbMATH DE number 976197
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| English | Novel low-voltage BiCMOS digital circuits employing a lateral p-n-p BJT in a p-MOS structure |
scientific article; zbMATH DE number 976197 |
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Novel low-voltage BiCMOS digital circuits employing a lateral p-n-p BJT in a p-MOS structure (English)
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31 March 1997
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