Novel low-voltage BiCMOS digital circuits employing a lateral p-n-p BJT in a p-MOS structure

DOI10.1049/IP-CDS:19960016MaRDI QIDQ4331630zbMATH OpenOpenAlexFDO

Authors S. S. Rofail

Publication date 31 March 1997

Published in IEE Proceedings - Circuits, Devices and Systems (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1049/ip-cds:19960016

Mathematics Subject Classification ID

Circuits, networks (94C99)

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