Monte Carlo modelling of abrupt InP/InGaAs HBTs (Q4418191)
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scientific article; zbMATH DE number 1961654
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| English | Monte Carlo modelling of abrupt InP/InGaAs HBTs |
scientific article; zbMATH DE number 1961654 |
Statements
Monte Carlo modelling of abrupt InP/InGaAs HBTs (English)
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7 August 2003
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heterojunction bipolar transistor (HBT)
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HBT modelling
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Monte Carlo (MC) device simulation
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electron transmission coefficient
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InP
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InGaAs
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III-V semiconductors
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0.7860237956047058
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0.7651978135108948
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0.7411407232284546
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