Monte Carlo simulation of steady-state transport in submicrometer InP and GaAs \(n^{+}- i(n)- n^{+}\) diode (Q3556835)
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scientific article; zbMATH DE number 5701787
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| English | Monte Carlo simulation of steady-state transport in submicrometer InP and GaAs \(n^{+}- i(n)- n^{+}\) diode |
scientific article; zbMATH DE number 5701787 |
Statements
MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETER<font>InP</font>AND<font>GaAs</font>n<sup>+</sup>–i(n)–n<sup>+</sup>DIODE (English)
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26 April 2010
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electric field
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back-scattering
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non-parabolic
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Brillouin zone
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0.8753404021263123
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0.7411407232284546
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0.7411407232284546
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0.732280433177948
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