Monte Carlo simulation of steady-state transport in submicrometer InP and GaAs n^+- i(n)- n^+ diode

DOI10.1142/S0217984910022603zbMATH Open1186.82096OpenAlexW2027292328MaRDI QIDQ3556835FDOQ3556835

Authors: H. Arabshahi, M. Rezaee Rokn-Abadi, F. Badieian Baghsiahi, M. R. Khalvati 

Publication date: 26 April 2010

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984910022603

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zbMATH Keywords

electric fieldback-scatteringBrillouin zonenon-parabolic

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

Cites Work

• On the FACR(l) algorithm for the discrete Poisson equation
• COMPARISON OF STEADY-STATE AND TRANSIENT ELECTRON TRANSPORT IN InAs, InP AND GaAs

Cited In (9)

• Monte-Carlo modeling of electron kinetics in room temperature quantum-dot photodetectors
• Modeling the frequency response of p⁺InP/n⁻InGaAs/n⁺InP photodiodes with an arbitrary electric field profile
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode
• Computational Science - ICCS 2004
• Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements
• Hot-phonon effects on the transport properties of an indium phosphide \(n^{+} -n-n^{+}\) diode
• MONTE CARLO SIMULATIONS OF STEADY-STATE TRANSPORT IN WURTZITE PHASE GaN SUBMICROMETER n⁺nn⁺ DIODE
• Monte Carlo Simulation of GaN Diode Including Intercarrier Interactions
• Monte Carlo modelling of abrupt InP/InGaAs HBTs

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