Hot-phonon effects on the transport properties of an indium phosphide n^+ -n-n^+ diode

MaRDI QIDQ3618933zbMATH OpenFDO

Authors Christopher Auer, F. Schürrer

Publication date 3 April 2009

zbMATH Keywords

Boltzmann--Poisson systemhot-photonsindium phosphidesemiconductor devices

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Kinetic theory of gases in time-dependent statistical mechanics (82C40)

Recommendations

• Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors
• Monte Carlo simulation of steady-state transport in submicrometer InP and GaAs \(n^{+}- i(n)- n^{+}\) diode
• A Multigroup Approach to the Coupled Electron‐Phonon Boltzmann Equations in InP
• A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
• A Semicontinuous Formulation of the Bloch--Boltzmann--Peierls Equations

Cited in

(3)

• Nonequilibrium phonon energy in crystals with hot electrons
• Hole transport and phonon scattering in epitaxial PbSe films
• Monte Carlo simulation of steady-state transport in submicrometer InP and GaAs \(n^{+}- i(n)- n^{+}\) diode

This page was built for publication: Hot-phonon effects on the transport properties of an indium phosphide \(n^{+} -n-n^{+}\) diode

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3618933)