COMPARISON OF STEADY-STATE AND TRANSIENT ELECTRON TRANSPORT IN InAs, InP AND GaAs

DOI10.1142/S0217984908016364MaRDI QIDQ3534048zbMATH OpenOpenAlexFDO

Authors H. Arabshahi, M. R. Khalvati, M. Rezaee Rokn-Abadi

Publication date 3 November 2008

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0217984908016364

zbMATH Keywords

critical fieldsteady-statevelocity overshoot

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70)

Cites work

• A fast Poisson solver for realistic semiconductor device structures

Cited in

(1)

• Monte Carlo simulation of steady-state transport in submicrometer InP and GaAs \(n^{+}- i(n)- n^{+}\) diode

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