An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors (Q4658929)
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scientific article; zbMATH DE number 2147288
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| English | An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors |
scientific article; zbMATH DE number 2147288 |
Statements
An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors (English)
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21 March 2005
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Ballistic transport, Double-gate devices, Analytical modeling, Subthreshold current model
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0.806279182434082
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0.7841294407844543
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0.7783050537109375
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0.7743980288505554
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