Shapes of epitaxially grown quantum dots (Q466786)

This article provides an rigorous analysis of a variational model for epitaxially deposited films proposed by \textit{B. J. Spencer} and \textit{J. Tersoff} [Appl. Phys. Lett. 96, 073114 (2010)]. Compared with most mathematical studies of the formation of quantum dots this model a) considers faceted profiles, i.e., the slope of the height profile may only take discrete values, and b) takes into account a non-zero crystallographic miscut angle. The energy functional consists of the surface energy of the film's free surface, and a strain energy term, and the competition between the two determines the optimal faceted shape of a film of given volume. The authors consider two-dimensional structures and prove the existence of localized energy minimizers for every volume of the deposited film and derive geometric properties of the minimizers. In particular, the authors prove faceted analogues of the classical wetting effect and the zero contact angle property. Precisely, they prove that for small film volumes the optimal faceted interface is a half-pyramid, and that the optimal profiles meet the substrate at the minimal admissible slope, thus confirming experimental and numerical observations.