A computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors (Q4912673)
From MaRDI portal
 | This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: A computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors |
scientific article; zbMATH DE number 6150768
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | A computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors |
scientific article; zbMATH DE number 6150768 |
Statements
A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (English)
0 references
5 April 2013
0 references
carbon nanotube
0 references
field effect transistor
0 references
band-to-band-tunneling
0 references
0.7515626549720764
0 references
0.7375959753990173
0 references
0.7238247990608215
0 references
0.7197813391685486
0 references
0.7142431139945984
0 references
