A computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors

DOI10.1142/S021797921250155XzbMATH Open1260.82086MaRDI QIDQ4912673FDOQ4912673

Authors: Reza Yousefi, Seyyed Saleh Ghoreishi 

Publication date: 5 April 2013

Published in: International Journal of Modern Physics B (Search for Journal in Brave)

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• Numerical study of quantum transport in carbon nanotube transistors
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zbMATH Keywords

carbon nanotubefield effect transistorband-to-band-tunneling

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

Cited In (7)

• Performance evaluation of source heterojunction strained channel gate all around nanowire transistor
• The dependence of electronic transport on compressive deformation of \(\text{C}_{60}\) molecule
• Numerical study of Ohmic-Schottky carbon nanotube field effect transistor
• NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS
• Numerical study of quantum transport in carbon nanotube transistors
• Influence of strain on functional characteristics of nanoelectronic devices
• Theoretical study of the performance for short channel carbon nanotube transistors with asymmetric contacts

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