Influence of strain on functional characteristics of nanoelectronic devices
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Publication:5953047
DOI10.1016/S0022-5096(01)00039-4zbMath0998.74007MaRDI QIDQ5953047
Lambert B. Freund, Harley T. Johnson
Publication date: 26 November 2002
Published in: Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/s0022-5096(01)00039-4
finite element method; Schrödinger equation; crystal lattice; thin films; charge transport; nanoelectronic device; semiconductor material; SiGe device
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