Influence of strain on functional characteristics of nanoelectronic devices
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Publication:5953047
DOI10.1016/S0022-5096(01)00039-4zbMATH Open0998.74007OpenAlexW2044743220MaRDI QIDQ5953047FDOQ5953047
Authors: L. B. Freund, H. T. Johnson 
Publication date: 26 November 2002
Published in: Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/s0022-5096(01)00039-4
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Cites Work
Cited In (11)
- Solutions of inhomogeneity problems with graded shells and application to core-shell nanoparticles and composites
- Elastic fields in quantum dots arrays: a three-dimensional finite element study
- Strain in layered nanocrystals
- The \(p-n\) junction under nonuniform strains: general theory and application to photovoltaics
- Electrical current in nanoelectronic devices
- The effect of uniaxial stress on band structure and electron mobility of silicon
- A computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors
- Strain fields in arbitrary shaped quantum wires
- The influence of strain on confined electronic states in semiconductor quantum structures
- Quantum field induced strains in nanostructures and prospects for optical actuation
- Eshelby formalism for nano-inhomogeneities
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