Influence of strain on functional characteristics of nanoelectronic devices

DOI10.1016/S0022-5096(01)00039-4zbMath0998.74007MaRDI QIDQ5953047

Lambert B. Freund, Harley T. Johnson

Publication date: 26 November 2002

Published in: Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s0022-5096(01)00039-4

zbMATH Keywords

finite element method; Schrödinger equation; crystal lattice; thin films; charge transport; nanoelectronic device; semiconductor material; SiGe device

Mathematics Subject Classification ID

74A60: Micromechanical theories

82D37: Statistical mechanics of semiconductors

Related Items

Eshelby formalism for nano-inhomogeneities, Elastic fields in quantum dots arrays: a three-dimensional finite element study, Strain fields in arbitrary shaped quantum wires, Quantum field induced strains in nanostructures and prospects for optical actuation, The \(p-n\) junction under nonuniform strains: general theory and application to photovoltaics, Solutions of inhomogeneity problems with graded shells and application to core-shell nanoparticles and composites

Cites Work

• The mechanics of electronic materials
• Motion of Electrons and Holes in Perturbed Periodic Fields
• The influence of strain on confined electronic states in semiconductor quantum structures