Influence of strain on functional characteristics of nanoelectronic devices

DOI10.1016/S0022-5096(01)00039-4MaRDI QIDQ5953047zbMATH OpenOpenAlexFDO

Authors L. B. Freund, H. T. Johnson

Publication date 26 November 2002

Published in Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/s0022-5096(01)00039-4

zbMATH Keywords

finite element methodthin filmscharge transportcrystal latticesemiconductor materialSchrödinger equationnanoelectronic deviceSiGe device

Mathematics Subject Classification ID

Micromechanical theories (74A60) Statistical mechanics of semiconductors (82D37)

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Cites work

• Motion of Electrons and Holes in Perturbed Periodic Fields
• The influence of strain on confined electronic states in semiconductor quantum structures
• The mechanics of electronic materials

Cited in

(11)

• Solutions of inhomogeneity problems with graded shells and application to core-shell nanoparticles and composites
• Elastic fields in quantum dots arrays: a three-dimensional finite element study
• Strain in layered nanocrystals
• Electrical current in nanoelectronic devices
• The \(p-n\) junction under nonuniform strains: general theory and application to photovoltaics
• The effect of uniaxial stress on band structure and electron mobility of silicon
• A computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors
• Strain fields in arbitrary shaped quantum wires
• Quantum field induced strains in nanostructures and prospects for optical actuation
• The influence of strain on confined electronic states in semiconductor quantum structures
• Eshelby formalism for nano-inhomogeneities

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