Influence of strain on functional characteristics of nanoelectronic devices

DOI10.1016/S0022-5096(01)00039-4MaRDI QIDQ5953047zbMATH OpenOpenAlexFDO

Authors L. B. Freund, H. T. Johnson

Publication date 26 November 2002

Published in Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/s0022-5096(01)00039-4

zbMATH Keywords

charge transportcrystal latticefinite element methodnanoelectronic deviceSchrödinger equationsemiconductor materialSiGe devicethin films

Mathematics Subject Classification ID

Micromechanical theories (74A60) Statistical mechanics of semiconductors (82D37)

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Cites work

• Motion of Electrons and Holes in Perturbed Periodic Fields
• The influence of strain on confined electronic states in semiconductor quantum structures
• The mechanics of electronic materials

Cited in

(11)

• The effect of uniaxial stress on band structure and electron mobility of silicon
• Quantum field induced strains in nanostructures and prospects for optical actuation
• The \(p-n\) junction under nonuniform strains: general theory and application to photovoltaics
• Solutions of inhomogeneity problems with graded shells and application to core-shell nanoparticles and composites
• Elastic fields in quantum dots arrays: a three-dimensional finite element study
• Electrical current in nanoelectronic devices
• A computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors
• Eshelby formalism for nano-inhomogeneities
• Strain in layered nanocrystals
• The influence of strain on confined electronic states in semiconductor quantum structures
• Strain fields in arbitrary shaped quantum wires

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