An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors (Q5066287)

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scientific article; zbMATH DE number 7499750
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An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors
scientific article; zbMATH DE number 7499750

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    An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors (English)
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    29 March 2022
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    silicon carbide semiconductors
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    Boltzmann equation
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    electron-phonon system
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    maximum entropy principle
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    thermal effects
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