TCAD simulation of radiation effects of pulsed neutrons in silicon bipolar junction transistor (Q5143751)
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scientific article; zbMATH DE number 7295966
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| English | TCAD simulation of radiation effects of pulsed neutrons in silicon bipolar junction transistor |
scientific article; zbMATH DE number 7295966 |
Statements
14 January 2021
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Silicon bipolar junction transistor
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pulsed neutron radiation
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displacement damage
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TCAD simulation
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0.7242488265037537
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0.7048920392990112
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0.6973611116409302
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0.6795004606246948
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0.6730517148971558
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