Asymptotic behavior of the drift-diffusion semiconductor equations (Q5917735)

The authors continue their work from [ibid., 523-566 (1995; reviewed above)]. They consider the following drift-diffusion semiconductor equations in a cylinder \(\Omega\times (0, +\infty)\) (\(\Omega\subset \mathbb{R}^d\) a bounded domain, \(d= 1, 2\) or 3): \[ {\partial n\over \partial t}- \mu_1 \text{div}(\nabla n- n \nabla u)= R(n, p) (1- np)+ g,\tag{1} \] \[ {\partial p\over \partial t}- \mu_2 \text{div}(\nabla p+ p \nabla u)= R(n, p) (1- np)+ g,\tag{2} \] \[ \varepsilon \Delta u= n- p- D\tag{3} \] (\(n=\) density of electrons, \(p=\) density of holes, \(u=\) electrostatic potential, \(\mu_1, \mu_2, \varepsilon= \text{const}> 0\), \(R\), \(g\), \(D\) given functions). System (1)--(3) is completed by mixed boundary conditions on \(n\), \(p\), \(u\) and initial conditions \(n= n_0\), \(p= p_0\) on \(\Omega\times \{0\}\). The authors consider the solution map \(S(t)(n_0, p_0)= (n(t), p(t))\) \((t> 0)\), \((n_0, p_0)\in H_{ad}\) (\(=\) set of admissible initial data) and study some semigroup properties of \(S\). Considering (1)--(3) as a dynamical system, it is shown that this system has a compact attractor that contracts \(L^\infty\)-bounded subsets in \(H_{ad}\). In addition, the authors prove the differentiability of the semigroup \(\{S(t)\}\) and estimate the Hausdorff-dimension of the attractor.