Current-voltage characteristics from an asymptotic analysis of the MOSFET equations (Q5936114)

The authors study semiconductors based on transistors called MOSFET (metal-oxyde-silicon-field-effect-transistors). The differential equations of a MOSFET transistor are studied by extending the asymptotic method of Ward. Practical methods for combining the perturbation approximations and numerically implementing the Ward equations are developed. A detailed comparison with the real MOSFET data is presented and the model is shown to be effective over a range of device geometries. Explicit formulae for the dependence of current flow on applied voltage and device geometry, doping, etc \(\dots\), have been obtained for the standard MOSFET.