Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction (Q6167599)
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scientific article; zbMATH DE number 7723435
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| English | Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction |
scientific article; zbMATH DE number 7723435 |
Statements
Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction (English)
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7 August 2023
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singularly perturbed elliptic problem
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reaction-advection-diffusion equation
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internal transition layers
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method of differential inequalities
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nonsmooth source
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electron-depletion layer
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GaAs
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N-shaped current-voltage characteristics
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0.795961320400238
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0.7762508988380432
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0.7752134203910828
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0.7713603377342224
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