Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling (Q662803)
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scientific article; zbMATH DE number 6009226
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| English | Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling |
scientific article; zbMATH DE number 6009226 |
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Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling (English)
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24 February 2012
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molecular-beam epitaxy
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0.6599798798561096
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0.6269133687019348
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0.619661808013916
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0.6176742911338806
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0.603438675403595
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