Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling (Q662803)
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| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling |
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Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling (English)
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24 February 2012
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molecular-beam epitaxy
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