Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models (Q696487)
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scientific article; zbMATH DE number 1800076
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| English | Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models |
scientific article; zbMATH DE number 1800076 |
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Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models (English)
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12 September 2002
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MOS compacitor
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