Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

DOI10.1016/S0010-4655(02)00248-5zbMATH Open0994.82568OpenAlexW2081730103MaRDI QIDQ696487FDOQ696487

Authors: Yiming Li, Jam-Wem Lee, Ting-Wei Tang, Tien-Sheng Chao, Tan-Fu Lei 

Publication date: 12 September 2002

Published in: Computer Physics Communications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s0010-4655(02)00248-5

zbMATH Keywords

MOS compacitor

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Title not available (Why is that?)
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
• Error Estimates on the Approximate Finite Volume Solution of Convection Diffusion Equations with General Boundary Conditions
• A Parallel Divide and Conquer Algorithm for the Symmetric Eigenvalue Problem on Distributed Memory Architectures
• Title not available (Why is that?)

Cited In (2)

• A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation

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