Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

DOI10.1016/S0010-4655(02)00248-5MaRDI QIDQ696487zbMATH OpenOpenAlexFDO

Authors Yiming Li, Jam-Wem Lee, Ting-Wei Tang, Tien-Sheng Chao, Tan-Fu Lei

Publication date 12 September 2002

Published in Computer Physics Communications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/s0010-4655(02)00248-5

zbMATH Keywords

MOS compacitor

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites work

• scientific article; zbMATH DE number 3215568 (Why is no real title available?)
• scientific article; zbMATH DE number 6304040 (Why is no real title available?)
• A Parallel Divide and Conquer Algorithm for the Symmetric Eigenvalue Problem on Distributed Memory Architectures
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
• Error Estimates on the Approximate Finite Volume Solution of Convection Diffusion Equations with General Boundary Conditions

Cited in

(2)

• A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation

This page was built for publication: Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q696487)