Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
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Publication:696487
DOI10.1016/S0010-4655(02)00248-5zbMath0994.82568OpenAlexW2081730103MaRDI QIDQ696487
Yiming Li, Jam-Wem Lee, Tan-Fu Lei, Tien-Sheng Chao, Ting-Wei Tang
Publication date: 12 September 2002
Published in: Computer Physics Communications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/s0010-4655(02)00248-5
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Cites Work
- Error Estimates on the Approximate Finite Volume Solution of Convection Diffusion Equations with General Boundary Conditions
- A Parallel Divide and Conquer Algorithm for the Symmetric Eigenvalue Problem on Distributed Memory Architectures
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
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