Mathematical modelling and numerical simulation of semiconductor detectors

MaRDI QIDQ4450490zbMATH OpenFDO

Authors Herbert Gajewski, Hans-Christoph Kaiser, Hartmut Langmach, Rolf Nürnberg, R. H. Richter

Publication date 15 February 2004

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)

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Cited in

(11)

• Mathematical model of the coordinate-sensitive photodetector with control electric field
• Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
• Diffusion model of superconducting tunnel junction detectors
• scientific article; zbMATH DE number 988725 (Why is no real title available?)
• Monte-Carlo calculation of NaI spatial activity
• Silicon planar detectors adapted to slow neutron detection
• scientific article; zbMATH DE number 146490 (Why is no real title available?)
• Optimal Sobolev regularity for linear second-order divergence elliptic operators occurring in real-world problems
• Mammography with detectors based on semiconductors
• Mathematical simulation of proton irradiation of tiristors with soft renewal
• Two-dimensional model of a strip detector with two tunnel junctions

Describes a project that uses

Uses Software

• WIAS-TeSCA

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