Modelling of the Czochralski flow

DOI10.1155/S1085337598000426MaRDI QIDQ5926217zbMATH OpenOpenAlexFDO

Authors Jan Franců

Publication date 29 September 2002

Published in Abstract and Applied Analysis (Search for Journal in Brave)

Full work available at URL https://eudml.org/doc/49402, http://www.hindawi.com/journals/aaa/volume-3/issue-1-2.html

zbMATH Keywords

convection-diffusion equationcylindrical coordinatesCzochralski flowexistence of weak solutionheat convection-conduction equationsmagnetic field effectNavier-Stokes equationsoxygen impuritysilicon meltsilicon single crystalweak formulation

Mathematics Subject Classification ID

PDEs in connection with fluid mechanics (35Q35) Multiphase and multicomponent flows (76T99) Stefan problems, phase changes, etc. (80A22)

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• Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals
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• Numerical modelling of the industrial silicon single crystal growth processes
• Tailoring the oxygen distribution in 300 mm Czochralski crystal of pure silicon using cusp magnetic field
• Convective interactions and flow stability in the Czochralski model in the case of crystal rotation

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