Modelling of the Czochralski flow
Summary: The Czochralski method of industrial production of a silicon single crystal consists of pulling up the single cyrstal from the silicon melt. The flow of the melt during the production is called Czochralski flow. The mathematical description of the flow consists of a coupled system of six partial differential equation in cylindrical coordinates containing Navier-Stokes equations (with stream function), heat convection-conduction equations, convection-diffusion equation for oxygen impurity, and an equation describing magnetic field effect. Here, we deal with the analysis of this system in the form used for numerical simulation. A weak formulation is derived, and the existence of weak solution to stationary and evolution problems is proved.
- Publication:4502668
- scientific article; zbMATH DE number 1006085
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- Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals
- Stress fields of solid flow in a model blast furnace
- Numerical resolution of the magnetohydrodynamics equations for the Czochralski process to obtain semiconductor crystals
- Modelling of a magnetohydrodynamics free surface problem arising in Czochralski crystal growth
- Mathematical Modelling of Radiative Heat Exchanges in Czochralski Crystal Pulling
- scientific article; zbMATH DE number 1006085 (Why is no real title available?)
- scientific article; zbMATH DE number 1504712 (Why is no real title available?)
- scientific article; zbMATH DE number 1748664 (Why is no real title available?)
- Numerical modelling of the industrial silicon single crystal growth processes
- Tailoring the oxygen distribution in 300 mm Czochralski crystal of pure silicon using cusp magnetic field
- Convective interactions and flow stability in the Czochralski model in the case of crystal rotation
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