Nano-scale MOSFET device modelling with quantum mechanical effects

DOI10.1017/S0956792506006656MaRDI QIDQ5423673zbMATH OpenOpenAlexFDO

Authors Ellis Cumberbatch, Shigeyasu Uno, Henok Abebe

Publication date 31 October 2007

Published in European Journal of Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1017/s0956792506006656

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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(16)

• The combined viscous semi-classical limit for a quantum hydrodynamic system with barrier potential
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• Approximate solutions to the quantum drift-diffusion model of semiconductors
• A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions
• Boundary layer analysis in the semiclassical limit of a quantum drift-diffusion model
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• Large-Scale Scientific Computing
• Technology and Device Modeling in Micro and Nano-electronics: Current and Future Challenges
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• 2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET
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