scientific article; zbMATH DE number 5038559

zbMATH Open1200.81154MaRDI QIDQ5477474FDOQ5477474

Pingwen Zhang, Haiyan Jiang

Publication date: 3 July 2006

Title of this publication is not available (Why is that?)

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zbMATH Keywords

quantum effectparameter extractionSchrödinger equationMOS capacitor

Mathematics Subject Classification ID

Numerical methods for inverse problems for initial value and initial-boundary value problems involving PDEs (65M32) Electromagnetic interaction; quantum electrodynamics (81V10)

Cited In (8)

• A steady-state mathematical model for an EOS capacitor: the effect of the size exclusion
• A QUANTITATIVE STUDY ON TUNNELING CONDUCTIVITY OF A FLOATING-GATE MOSFET IN TERMS OF THE OXIDE-LAYER WIDTH
• A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation
• The gate to body capacitance of a MOSFET by asymptotic analysis
• Analysis of parasitic quantum effects in classical CMOS circuits
• An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
• An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation
• Title not available (Why is that?)

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