scientific article; zbMATH DE number 5038559

MaRDI QIDQ5477474zbMATH OpenFDO

Authors Haiyan Jiang, Pingwen Zhang

Publication date 3 July 2006

zbMATH Keywords

MOS capacitorparameter extractionquantum effectSchrödinger equation

Mathematics Subject Classification ID

Numerical methods for inverse problems for initial value and initial-boundary value problems involving PDEs (65M32) Electromagnetic interaction; quantum electrodynamics (81V10)

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(8)

• An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
• The gate to body capacitance of a MOSFET by asymptotic analysis
• A QUANTITATIVE STUDY ON TUNNELING CONDUCTIVITY OF A FLOATING-GATE MOSFET IN TERMS OF THE OXIDE-LAYER WIDTH
• scientific article; zbMATH DE number 845982 (Why is no real title available?)
• Analysis of parasitic quantum effects in classical CMOS circuits
• An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation
• A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation
• A steady-state mathematical model for an EOS capacitor: the effect of the size exclusion

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