An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors

DOI10.1016/J.MATCOM.2014.11.018MaRDI QIDQ2228702zbMATH OpenOpenAlexFDO

Authors Yanyan Li

Publication date 19 February 2021

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.matcom.2014.11.018

zbMATH Keywords

DIBL effectsMOSFETsthreshold voltage extractionWENO procedure

Mathematics Subject Classification ID

Optics, electromagnetic theory (78-XX) Biology and other natural sciences (92-XX)

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Cites work

• A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
• Efficient implementation of weighted ENO schemes
• Point-value WENO multiresolution applications to stable image compression
• Weighted ENO interpolation and applications.
• Weighted essentially non-oscillatory schemes

Cited in

(9)

• Stochastic modeling of random access memories reset transitions
• Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials
• An efficient smoothness indicator mapped WENO scheme for hyperbolic conservation laws
• A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
• High order WENO and DG methods for time-dependent convection-dominated PDEs: A brief survey of several recent developments
• A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
• New RF extrinsic resistances extraction procedure for deep-submicron MOS transistors
• scientific article; zbMATH DE number 845982 (Why is no real title available?)
• Polynomial pattern finding in scattered data

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