A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines

DOI10.1016/j.matcom.2013.04.024OpenAlexW2069883618MaRDI QIDQ2229858

Yanyan Li

Publication date: 18 February 2021

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.matcom.2013.04.024

zbMATH Keywords

smoothing splineparameter extractionMOSFETBoolean sumthreshold voltage

Mathematics Subject Classification ID

Numerical approximation and computational geometry (primarily algorithms) (65Dxx) Approximations and expansions (41Axx)

Related Items (5)

A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain ⋮ An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors ⋮ Polynomial pattern finding in scattered data ⋮ Stochastic modeling of random access memories reset transitions ⋮ Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials

Cites Work

• Unnamed Item
• Smoothing by spline functions. II
• Smoothing by spline functions.
• SPLINE FUNCTIONS AND THE PROBLEM OF GRADUATION
• Smoothing noisy data with spline functions
• A practical guide to splines.

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