Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials

DOI10.1016/J.MATCOM.2018.09.028MaRDI QIDQ1997630zbMATH OpenOpenAlexWikidataFDO

Authors Yanyan Li

Publication date 2 March 2021

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.matcom.2018.09.028

zbMATH Keywords

B-splinesquasi-interpolationdiscrete orthogonal polynomialsreset voltageresistive RAM

Mathematics Subject Classification ID

Numerical analysis (65-XX) Numerical approximation and computational geometry (primarily algorithms) (65Dxx) Approximations and expansions (41Axx) Approximations and expansions (41-XX)

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• A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
• A practical guide to splines.
• A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
• An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
• Orthogonal polynomials (in Matlab)
• Polynomial pattern finding in scattered data
• The Approximate Solution of an Integral Equation Using High-Order Gaussian Quadrature Formulas
• The calculation of integrals involving B-splines by means of recursion relations

Cited in

(3)

• A trivariate near-best blending quadratic quasi-interpolant
• A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
• Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications

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Uses Software

• OPQ

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