Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials

DOI10.1016/J.MATCOM.2018.09.028MaRDI QIDQ1997630zbMATH OpenOpenAlexWikidataFDO

Authors Yanyan Li

Publication date 2 March 2021

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.matcom.2018.09.028

zbMATH Keywords

B-splinesdiscrete orthogonal polynomialsquasi-interpolationreset voltageresistive RAM

Mathematics Subject Classification ID

Approximations and expansions (41-XX) Approximations and expansions (41Axx) Numerical analysis (65-XX) Numerical approximation and computational geometry (primarily algorithms) (65Dxx)

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Cites work

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• Polynomial pattern finding in scattered data
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• The calculation of integrals involving B-splines by means of recursion relations

Cited in

(4)

• Stochastic modeling of random access memories reset transitions
• A trivariate near-best blending quadratic quasi-interpolant
• A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
• Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications

Describes a project that uses

Uses Software

• OPQ

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