Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials

DOI10.1016/J.MATCOM.2018.09.028OpenAlexW2908350174WikidataQ128666594 ScholiaQ128666594MaRDI QIDQ1997630FDOQ1997630

Authors: Yanyan Li 

Publication date: 2 March 2021

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.matcom.2018.09.028

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zbMATH Keywords

B-splinesquasi-interpolationdiscrete orthogonal polynomialsreset voltageresistive RAM

Mathematics Subject Classification ID

Numerical analysis (65-XX) Numerical approximation and computational geometry (primarily algorithms) (65Dxx) Approximations and expansions (41Axx) Approximations and expansions (41-XX)

Cites Work

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• A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
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• The calculation of integrals involving \(B\)-splines by means of recursion relations
• A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
• The Approximate Solution of an Integral Equation Using High-Order Gaussian Quadrature Formulas

Cited In (3)

• A trivariate near-best blending quadratic quasi-interpolant
• A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
• Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications

Uses Software

• OPQ

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