Stochastic modeling of random access memories reset transitions

DOI10.1016/J.MATCOM.2018.11.016MaRDI QIDQ1997519zbMATH OpenOpenAlexWikidataFDO

Authors M. Carmen Aguilera-Morillo, F. Jiménez-Molinos, J. B. Roldán, Ana M. Aguilera

Publication date 2 March 2021

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL http://hdl.handle.net/10481/71546

zbMATH Keywords

device variabilityfunctional dataKarhunen-Loève expansionpenalized splinesresistive memoriesresistive switching

Mathematics Subject Classification ID

Statistics (62-XX) Statistical mechanics, structure of matter (82-XX)

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Cited in

(6)

• Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials
• Homogeneity problem for basis expansion of functional data with applications to resistive memories
• Linear-phase-type probability modelling of functional PCA with applications to resistive memories
• Memory Nearly on a Spring: A Mean First Passage Time Approach to Memory Lifetimes
• The cost of stochastic resetting
• Comments on: ``Exploratory functional data analysis

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