Noise in Semiconductors: Spectrum of a Two-Parameter Random Signal

DOI10.1063/1.1721637MaRDI QIDQ5826590zbMATH OpenOpenAlexFDO

Authors Stefan MacHlup

Publication date 1954

Published in Journal of Applied Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1063/1.1721637

zbMATH Keywords

optics, electromagnetic theory

Cites work

• Mathematical Analysis of Random Noise

Cited in

(8)

• Statistical properties of the asymmetric random telegraph signal, with applications to single-channel analysis
• The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors
• Quantum correlations and coherence dynamics in qutrit-qutrit systems under mixed classical environmental noises
• RTS noise in semiconductor devices: time constants estimates and observation window analysis
• Liquid transport in scale space
• The power spectrum of a generalized random telegraph signal with special reference to 1/f noise
• The power spectrum of a generalized random telegraph signal with random amplitude
• Random telegraph signals with time dependent capture and emission probabilities: analytical and numerical results

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