RTS noise in semiconductor devices: time constants estimates and observation window analysis

DOI10.1088/1742-5468/AC5DBFMaRDI QIDQ5078653zbMATH OpenOpenAlexFDO

Authors Roberto da Silva, Gilson I. Wirth

Publication date 23 May 2022

Published in Journal of Statistical Mechanics: Theory and Experiment (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1088/1742-5468/ac5dbf

zbMATH Keywords

current fluctuationsfluctuation phenomenainterfaces in random medianoise models

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

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Cites work

• A novel and precise time domain description of Mosfet low frequency noise due to random telegraph signals
• Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices
• Noise in Semiconductors: Spectrum of a Two-Parameter Random Signal
• Probability and statistics with reliability, queuing, and computer science applications
• Random telegraph signals with time dependent capture and emission probabilities: analytical and numerical results

Cited in

(1)

• A tabular source approach to modelling and simulating device and circuit noise in the time domain

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