Noise in semiconductor devices. Modeling and simulation
This book is devoted to the research and estimation of the electrical noise generated by active semiconductor devices. It provides a thorough introduction to the physics-based numerical modeling of these devices operating both in small-signal and in large-signal conditions. The book is divided into five chapters and one appendix. In the first chapter, an introduction to fluctuation phenomena in semiconductors is provided from the standpoint of materials and devices. This chapter is devoted to the statistical characterization of microscopic noise sources in a quasi-classical and in a quantum framework. A brief review is presented on the circuit-oriented noise characterization of a multi-port in small-signal conditions. Then, the Nyquist theorem is extended to noisy multi-ports at or near equilibrium, and some system noise parameters are considered. The second chapter introduces physics-based device models (in particular, the drift-diffusion model) and gives a detailed treatment of the Langevin approach to noise simulation, including the Green's function solution technique, connected, e.g. with the impedance field method. The last part of the chapter is devoted to analytical applications of the Green's function approach to field-effect and bipolar devices so as to obtain compact noise models of electron devices. A review of the numerical techniques for device simulation with respect to a DC steady state (small-signal operation) is presented in Chapter 3. The numerical implementation of the approach within the framework of multi-dimensional numerical device models is discussed in detail with reference to the customary finite-boxes discretization scheme. The efficient evaluation of Green's functions required for noise analysis is based on the so-called adjoint approach to efficient noise evaluation in electrical networks. The practical application of this approach to a discretized semiconductor device model is confined to the monopolar drift-diffusion case. Moreover, for another efficient evaluation of Green's function, the generalized adjoint approach is applied, which was originally developed for network small-change sensitivity and noise analysis, to partial differential equation-based discretized device models. Chapter 4 presents some results and case studies on the physics-based numerical simulation of noise in small-signal conditions for several device classes ranging from the simple bulk resistor to transistors. The discussion starts from the physical structure and then proceeds to discussing the behavior of Green's functions in and out of equilibrium. The distribution of the spatial noise densities provides the investigation of the noise current or voltage correlation matrix. Then, it provides details towards understanding the spatial origin of noise. Finally, the behavior of the correlation spectrum is discussed and compared, where possible to analytical approaches. Chapter 5 deals with the topic of noise simulation in forced, nonlinear, quasi-periodic (or large-signal periodic) device operation. The topic of large-signal noise simulation is addressed into the framework of the harmonic balance method, and implementation details are given for the non-autonomouse case. The application fields covered range from low-noise, small-signal amplifiers to nonlinear circuits such as RF and microwave frequency multipliers and mixers. The appendix is devoted to a brief introduction to the mathematics exploited in noise analysis with particular attention to basic probability concepts, random processes and their linear transformations. In total, this comprehensive treatment of the numerical simulation of noise in semiconductor devices successfully combines a modern physical understanding with rigorous mathematics and numerical methods. This book should be recommended to scientists and engineers of corresponding specialties and could be a basis for separate parts of a course on semiconductor devices.
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