1/f noise under drift and thermal agitation in semiconductor materials

DOI10.1016/J.PHYSA.2022.126917MaRDI QIDQ2669405zbMATH OpenOpenAlexFDO

Authors Ferdinand Grüneis

Publication date 9 March 2022

Published in Physica A (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/2202.05390

zbMATH Keywords

1/f noisefluorescence intermittencygeneration-recombination noisenoise processes and phenomena in electronic transportsingle quantum dotsstatistical thermodynamics

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Cites work

• An alternative form of Hooge's relation for 1/f noise in semiconductor materials
• Estimation of the lowest limit of \(1/f\) noise in semiconductor materials
• scientific article; zbMATH DE number 1649498 (Why is no real title available?)
• scientific article; zbMATH DE number 3304505 (Why is no real title available?)
• Intermittency in relation with 1/f noise and stochastic differential equations
• Mathematical Analysis of Random Noise
• Solid state physics.
• The Statistical Energy-Frequency Spectrum of Random Disturbances
• The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

Cited in

(2)

• The power spectrum of a generalized random telegraph signal with special reference to 1/f noise
• 1/f noise in semiconductors arising from the heterogeneous detrapping process of individual charge carriers

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