An alternative form of Hooge's relation for 1/f noise in semiconductor materials

DOI10.1016/j.physleta.2019.02.009zbMath1471.82029arXiv2108.07155OpenAlexW2912213330MaRDI QIDQ820577

Ferdinand Grüneis

Publication date: 27 September 2021

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/2108.07155

zbMATH Keywords

1/f noisegeneration-recombination noisenoise processes and phenomena in electronic transport

Mathematics Subject Classification ID

White noise theory (60H40) Statistical mechanics of semiconductors (82D37) Statistical mechanics of solids (82D20)

Related Items (3)

1/f noise under drift and thermal agitation in semiconductor materials ⋮ Estimation of the lowest limit of \(1/f\) noise in semiconductor materials ⋮ The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

Cites Work

• Unnamed Item
• Intermittency in relation with 1/f noise and stochastic differential equations
• The Statistical Energy-Frequency Spectrum of Random Disturbances
• Energy Band Structures in Semiconductors

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