An alternative form of Hooge's relation for 1/f noise in semiconductor materials

DOI10.1016/J.PHYSLETA.2019.02.009zbMATH Open1471.82029arXiv2108.07155OpenAlexW2912213330MaRDI QIDQ820577FDOQ820577

Authors: Ferdinand Grüneis 

Publication date: 27 September 2021

Published in: Physics Letters. A (Search for Journal in Brave)

Abstract: Single quantum dots and other materials exhibit irregular switching between on and off states; these on-off states follow power-law statistics giving rise to 1/f noise. We transfer this phenomenon (also referred to as on-off intermittency) to the generation and recombination (g-r) process in semiconductor materials. In addition to g-r noise we obtain 1/f noise that can be provided in the form of the Hooge relation. The predicted Hooge coefficient depends on the parameters of the g-r noise and on the parameters of the intermittency. Due to the power-law distribution of the on-times, the coefficient for intermittency shows a smooth dependence on time t. We also suggest an alternative form of the 1/f noise formula by Hooge relating the 1/f noise to the number of centers (such as donor or trap atoms) rather than to the number of charge carriers as defined by Hooge.

Full work available at URL: https://arxiv.org/abs/2108.07155

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zbMATH Keywords

1/f noisegeneration-recombination noisenoise processes and phenomena in electronic transport

Mathematics Subject Classification ID

White noise theory (60H40) Statistical mechanics of solids (82D20) Statistical mechanics of semiconductors (82D37)

Cites Work

• Riemann's zeta function
• Energy Band Structures in Semiconductors
• Intermittency in relation with \(1/f\) noise and stochastic differential equations
• The Statistical Energy-Frequency Spectrum of Random Disturbances

Cited In (6)

• \(1/f\) noises of homopolar and heteropolar semiconductors
• A quantum bound on the \(1/f\) noise in semiconductors with a conical energy-momentum dispersion
• Corrigendum to: ``The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors
• 1/f noise under drift and thermal agitation in semiconductor materials
• The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors
• Estimation of the lowest limit of \(1/f\) noise in semiconductor materials

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