Estimation of the lowest limit of 1/f noise in semiconductor materials

DOI10.1016/J.PHYSLETA.2019.126145MaRDI QIDQ2212911zbMATH OpenOpenAlexFDO

Authors Ferdinand Grüneis

Publication date 27 November 2020

Published in Physics Letters. A (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/2108.07688

zbMATH Keywords

\(1/f\) noisestatistical physicsgeneration-recombination noisenoise processes and phenomena in electronic transportfluorescence intermittencysingle quantum dots

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Statistical mechanics in condensed matter (general) (82D03)

Abstract: A lowest limit of 1/f noise in semiconductor materials has not yet been reported; we do not even know if such a lowest limit exists. 1/f noise in semiconductors has recently been brought into relation with 1/f noise in quantum dots and other materials. These materials exhibit on-off states which are power-law distributed over a wide range of timescales. We transfer such findings to semiconductors, assuming that the g-r process is also controlled by such on-off states. As a result, we obtain 1/f noise which can be expressed in the form of the Hooge relation. Based on the intermittent g-r process, we estimate the lowest limit of 1/f noise in semiconductor materials. We show that this limit is inversely proportional to the dopant concentration; to detect the lowest limit of 1/f noise, the number of centers should be as small as possible. We also find a smooth dependence of 1/f noise and g-r noise on time.

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Cites work

• scientific article; zbMATH DE number 3410386 (Why is no real title available?)
• An alternative form of Hooge's relation for 1/f noise in semiconductor materials
• Intermittency in relation with \(1/f\) noise and stochastic differential equations
• Riemann's zeta function
• The Statistical Energy-Frequency Spectrum of Random Disturbances

Cited in

(7)

• Corrigendum to: ``The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors
• 1/f noise under drift and thermal agitation in semiconductor materials
• A quantum bound on the \(1/f\) noise in semiconductors with a conical energy-momentum dispersion
• An alternative form of Hooge's relation for 1/f noise in semiconductor materials
• Analysis of 1/f noise in switched MOSFET circuits
• \(1/f\) noises of homopolar and heteropolar semiconductors
• The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

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