Nonlinear Poisson equation (Boltzmann approximation)

nonlinear Poisson equation (Boltzmann approximation) for calculation of built-in potential

formula

MaRDI QIDQ7284044FDOCommunityMathModDB

Formula(s) and Quantities

$-\mathrm{\nabla }\cdot \left({\epsilon }_s\mathrm{\nabla }{\psi }_{eq}\right)=q(N_v\exp \left(\frac{E_v-q{\psi }_{eq}}{k_{B}T}\right)-N_c\exp \left(\frac{q{\psi }_{eq}-E_c}{k_{B}T}\right)+C)$

${\psi }_{eq}$ represents built-in potential

$C$ represents doping profile

$N_v$ represents effective density of states in the valence band

$E_v$ represents band edge energy for valence band

$N_c$ represents effective density of states in the conduction band

$E_c$ represents band edge energy for conduction band

${\epsilon }_s$ represents permittivity

$q$ represents elementary charge

$k_B$ represents Boltzmann constant

$T$ represents temperature

Further links

Item	Property
semiconductor thermodynamic equilibrium	contains

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