Semiconductor thermal equilibrium
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Description
Defines semiconductor thermodynamic equilibrium as the solution of the nonlinear Poisson equation. The resulting electrostatic potential is the built-in potential, for which drift and diffusion currents exactly balance each other, yielding zero net current.
Contained entities
| built-in potential | output | |
| Neumann boundary condition in thermodynamic equilibrium | boundary condition | |
| represents built-in potential | ||
| represents artificial boundary interface | ||
| represents unit normal vector | ||
| Dirichlet boundary condition in thermodynamic equilibrium | boundary condition | |
| represents built-in potential | ||
| represents local charge-neutrality potential | ||
| represents electrode interfaces | ||
| represents contact index | ||
| doping profile | input | |
| nonlinear Poisson equation (Boltzmann approximation) | governing equation | |
| represents built-in potential | ||
| represents doping profile | ||
| represents effective density of states in the valence band | ||
| represents band edge energy for valence band | ||
| represents effective density of states in the conduction band | ||
| represents band edge energy for conduction band | ||
| represents permittivity | ||
| represents elementary charge | ||
| represents Boltzmann constant | ||
| represents temperature | ||
Specializations
Further links
| Item | Property |
|---|---|
| drift-diffusion model | used by |
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