The influence of mechanical constraint upon the switching of a ferroelectric memory capacitor
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Publication:1006764
DOI10.1016/j.euromechsol.2008.09.002zbMath1156.74324OpenAlexW2122376340MaRDI QIDQ1006764
D. P. Chu, Ivindra Pane, Norman A. Fleck, John E. Huber
Publication date: 25 March 2009
Published in: European Journal of Mechanics. A. Solids (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.euromechsol.2008.09.002
Control, switches and devices (``smart materials) in solid mechanics (74M05) Finite element methods applied to problems in solid mechanics (74S05) Electromagnetic effects in solid mechanics (74F15)
Cites Work
- Three-dimensional finite element simulations of ferroelectric polycrystals under electrical and mechanical loading
- Effect of geometry upon the performance of a thin film ferroelectric capacitor
- Multi-grain analysis versus self-consistent estimates of ferroelectric polycrystals
- Ferroelectric switching: a micromechanics model versus measured behaviour
- A constitutive model for ferroelectric polycrystals
- Multi-axial electrical switching of a ferroelectric: Theory versus experiment
- On the local and average energy release in polarization switching phenomena