The influence of mechanical constraint upon the switching of a ferroelectric memory capacitor
DOI10.1016/J.EUROMECHSOL.2008.09.002zbMATH Open1156.74324OpenAlexW2122376340MaRDI QIDQ1006764FDOQ1006764
Authors: D. P. Chu, Ivindra Pane, N. A. Fleck, J. E. Huber 
Publication date: 25 March 2009
Published in: European Journal of Mechanics. A. Solids (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.euromechsol.2008.09.002
Recommendations
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Cites Work
- A constitutive model for ferroelectric polycrystals
- Multi-grain analysis versus self-consistent estimates of ferroelectric polycrystals
- Ferroelectric switching: a micromechanics model versus measured behaviour
- Three-dimensional finite element simulations of ferroelectric polycrystals under electrical and mechanical loading
- Multi-axial electrical switching of a ferroelectric: Theory versus experiment
- On the local and average energy release in polarization switching phenomena
- Effect of geometry upon the performance of a thin film ferroelectric capacitor
Cited In (5)
- Effect of geometry upon the performance of a thin film ferroelectric capacitor
- Experimental observation of a torus doubling of a metal/ferroelectric film/semiconductor capacitor
- Ferroelectric switching: a micromechanics model versus measured behaviour
- Numerical study of switching behavior in finite media subject to 3D ferroelectric-paraelectric interactions and inspection of calibration effects
- Configurational forces in ferroelectric structures analyzed by a macromechanical switching model
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