The influence of mechanical constraint upon the switching of a ferroelectric memory capacitor

DOI10.1016/J.EUROMECHSOL.2008.09.002MaRDI QIDQ1006764zbMATH OpenOpenAlexFDO

Authors D. P. Chu, Ivindra Pane, N. A. Fleck, J. E. Huber

Publication date 25 March 2009

Published in European Journal of Mechanics. A. Solids (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.euromechsol.2008.09.002

zbMATH Keywords

modelmemorystressthin filmferroelectric

Mathematics Subject Classification ID

Electromagnetic effects in solid mechanics (74F15) Finite element methods applied to problems in solid mechanics (74S05) Control, switches and devices (``smart materials) in solid mechanics (74M05)

Recommendations

• Effect of geometry upon the performance of a thin film ferroelectric capacitor
• Ferroelectric switching: a micromechanics model versus measured behaviour
• Minimum size of 180 degree domains in ferroelectric thin films covered by electrodes
• Mechanical switching of ferroelectric domains beyond flexoelectricity
• Numerical study of switching behavior in finite media subject to 3D ferroelectric-paraelectric interactions and inspection of calibration effects

Cites work

• A constitutive model for ferroelectric polycrystals
• Effect of geometry upon the performance of a thin film ferroelectric capacitor
• Ferroelectric switching: a micromechanics model versus measured behaviour
• Multi-axial electrical switching of a ferroelectric: Theory versus experiment
• Multi-grain analysis versus self-consistent estimates of ferroelectric polycrystals
• On the local and average energy release in polarization switching phenomena
• Three-dimensional finite element simulations of ferroelectric polycrystals under electrical and mechanical loading

Cited in

(5)

• Configurational forces in ferroelectric structures analyzed by a macromechanical switching model
• Effect of geometry upon the performance of a thin film ferroelectric capacitor
• Experimental observation of a torus doubling of a metal/ferroelectric film/semiconductor capacitor
• Ferroelectric switching: a micromechanics model versus measured behaviour
• Numerical study of switching behavior in finite media subject to 3D ferroelectric-paraelectric interactions and inspection of calibration effects

This page was built for publication: The influence of mechanical constraint upon the switching of a ferroelectric memory capacitor

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q1006764)