Electronic transport in semiconductors at high energy

DOI10.1016/0010-4655(91)90223-8MaRDI QIDQ1366085zbMATH OpenOpenAlexFDO

Authors M. García

Publication date 10 November 1997

Published in Computer Physics Communications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/0010-4655(91)90223-8

zbMATH Keywords

Boltzmann transport equationelectron-phonon interactionpseudopotentialsMonte Carlo particle methodband-to-band impact ionization ratesbandstructureelectronic transport in semiconductorshot-electron effects

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Applications to the sciences (65Z05)

Cites work

• scientific article; zbMATH DE number 3144471 (Why is no real title available?)
• scientific article; zbMATH DE number 41859 (Why is no real title available?)
• Deformation Potentials and Mobilities in Non-Polar Crystals
• Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
• Free-flight time generation in the Monte Carlo simulation of carrier transport in semiconductors
• Mobility in High Electric Fields

Cited in

(1)

• Monte Carlo simulation of semiconductor devices

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