Electronic transport in semiconductors at high energy

DOI10.1016/0010-4655(91)90223-8zbMATH Open0875.65099OpenAlexW1966156717MaRDI QIDQ1366085FDOQ1366085

Authors: M. García 

Publication date: 10 November 1997

Published in: Computer Physics Communications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0010-4655(91)90223-8

zbMATH Keywords

Boltzmann transport equationelectron-phonon interactionpseudopotentialsMonte Carlo particle methodband-to-band impact ionization ratesbandstructureelectronic transport in semiconductorshot-electron effects

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Applications to the sciences (65Z05)

Cites Work

• Title not available (Why is that?)
• Title not available (Why is that?)
• Deformation Potentials and Mobilities in Non-Polar Crystals
• Free-flight time generation in the Monte Carlo simulation of carrier transport in semiconductors
• Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
• Mobility in High Electric Fields

Cited In (1)

• Monte Carlo simulation of semiconductor devices

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