Electronic transport in semiconductors at high energy

DOI10.1016/0010-4655(91)90223-8zbMath0875.65099OpenAlexW1966156717MaRDI QIDQ1366085

M. García

Publication date: 10 November 1997

Published in: Computer Physics Communications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0010-4655(91)90223-8

zbMATH Keywords

electron-phonon interactionBoltzmann transport equationpseudopotentialsMonte Carlo particle methodband-to-band impact ionization ratesbandstructureelectronic transport in semiconductorshot-electron effects

Mathematics Subject Classification ID

Monte Carlo methods (65C05) PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items

Monte Carlo simulation of semiconductor devices

Cites Work

• Free-flight time generation in the Monte Carlo simulation of carrier transport in semiconductors
• Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
• Deformation Potentials and Mobilities in Non-Polar Crystals
• Mobility in High Electric Fields
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