A note on current-voltage characteristics from the quantum hydrodynamic equations for semiconductors

DOI10.1016/S0893-9659(97)00055-4zbMATH Open0894.76097MaRDI QIDQ1372297FDOQ1372297

Ansgar Jüngel

Publication date: 7 September 1998

Published in: Applied Mathematics Letters (Search for Journal in Brave)

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zbMATH Keywords

numerical solutionasymptotic analysisquantum drift-diffusion modelsimplified one-dimensional quantum models

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Quantum hydrodynamics and relativistic hydrodynamics (76Y05)

Cites Work

• Collocation Software for Boundary-Value ODEs
• The Quantum Hydrodynamic Model for Semiconductor Devices
• Title not available (Why is that?)
• A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device

Cited In (13)

• ASYMPTOTIC LIMITS FOR QUANTUM TRAJECTORY MODELS
• Title not available (Why is that?)
• Numerical study of the quantum Euler-Poisson model
• Quantum hydrodynamic model by moment closure of Wigner equation
• Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models
• THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS
• Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices
• Numerical approximation of the viscous quantum hydrodynamic model for semiconductors
• Title not available (Why is that?)
• SIMULATION OF SOME QUANTUM MODELS FOR SEMICONDUCTORS
• Global solutions for the compressible quantum hydrodynamic model in a bounded domain
• A REVIEW ON THE QUANTUM DRIFT DIFFUSION MODEL
• A note on boundary conditions for quantum hydrodynamic equations

Uses Software

• COLSYS

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