A note on current-voltage characteristics from the quantum hydrodynamic equations for semiconductors

DOI10.1016/S0893-9659(97)00055-4MaRDI QIDQ1372297zbMATH OpenFDO

Authors Ansgar Jüngel

Publication date 7 September 1998

Published in Applied Mathematics Letters (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/S0893-9659(97)00055-4

zbMATH Keywords

numerical solutionasymptotic analysisquantum drift-diffusion modelsimplified one-dimensional quantum models

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Quantum hydrodynamics and relativistic hydrodynamics (76Y05)

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Cites work

• scientific article; zbMATH DE number 978579 (Why is no real title available?)
• A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
• Collocation Software for Boundary-Value ODEs
• The Quantum Hydrodynamic Model for Semiconductor Devices

Cited in

(13)

• A note on boundary conditions for quantum hydrodynamic equations
• A REVIEW ON THE QUANTUM DRIFT DIFFUSION MODEL
• ASYMPTOTIC LIMITS FOR QUANTUM TRAJECTORY MODELS
• scientific article; zbMATH DE number 879887 (Why is no real title available?)
• Numerical study of the quantum Euler-Poisson model
• Quantum hydrodynamic model by moment closure of Wigner equation
• Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models
• THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS
• Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices
• Numerical approximation of the viscous quantum hydrodynamic model for semiconductors
• scientific article; zbMATH DE number 1568296 (Why is no real title available?)
• Global solutions for the compressible quantum hydrodynamic model in a bounded domain
• SIMULATION OF SOME QUANTUM MODELS FOR SEMICONDUCTORS

Describes a project that uses

Uses Software

• COLSYS

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