A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device

DOI10.1137/0144018MaRDI QIDQ5185385zbMATH OpenOpenAlexFDO

Authors Christian Ringhofer, Peter Alexander Markowich

Publication date 1984

Published in SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/0144018

zbMATH Keywords

boundary layer problemmathematical modelNumerical solutionssingular perturbation problemwidth

Mathematics Subject Classification ID

Nonlinear ordinary differential equations and systems (34A34) Nonlinear boundary value problems for ordinary differential equations (34B15) Asymptotic expansions of solutions to ordinary differential equations (34E05) Singular perturbations for ordinary differential equations (34E15)

Recommendations

• A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
• The existence and uniqueness of the solution of the boundary-value problem for the one-dimensional drift-diffusion model of a semiconductor device
• A Singular Perturbation Analysis of Reverse Biased $pn$-Junctions
• An Asymptotic Analysis of One-Dimensional Models of Semiconductor Devices
• A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations

Cited in

(31)

• Behavior of the potential at the pn-junction for a model in semiconductor theory
• A note on current-voltage characteristics from the quantum hydrodynamic equations for semiconductors
• The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure
• A survey of numerical techniques for solving singularly perturbed ordinary differential equations
• Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
• The \(p-n\) junction under nonuniform strains: general theory and application to photovoltaics
• Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
• Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
• The initial-boundary value problem of semiconductor equations with discontinuous permittivities
• Quasi-neutral limit of the multidimensional drift-diffusion models for semiconductors
• ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
• Singular perturbation analysis of the steady-state Poisson–Nernst–Planck system: Applications to ion channels
• A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
• A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
• scientific article; zbMATH DE number 4065482 (Why is no real title available?)
• A Singular Perturbation Analysis for the Transient Semiconductor Device Equations in One Space Dimension
• Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
• scientific article; zbMATH DE number 1057689 (Why is no real title available?)
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• scientific article; zbMATH DE number 4000478 (Why is no real title available?)
• scientific article; zbMATH DE number 4113042 (Why is no real title available?)
• Singular perturbation theory applied to the electrochemistry equations in the case of electroneutrality
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• scientific article; zbMATH DE number 2206785 (Why is no real title available?)
• QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
• Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
• On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
• Existence and stability of stationary solutions with boundary layers in a Tikhonov-type system arising in the drift-diffusion model of semiconductors of sub-Debye-length
• Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile

This page was built for publication: A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5185385)