Atomistic simulations on the tensile debonding of an aluminum-silicon interface.
DOI10.1016/S0022-5096(99)00086-1zbMATH Open1052.74502OpenAlexW2003901771WikidataQ127352965 ScholiaQ127352965MaRDI QIDQ1582441FDOQ1582441
Authors: Ken Gall, Mark Van Schilfgaarde, M. I. Baskes, Mark F. Horstemeyer 
Publication date: 2000
Published in: Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/s0022-5096(99)00086-1
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Cites Work
- Crack deflection at an interface between dissimilar elastic materials: Role of residual stresses
- Computational modelling of impact damage in brittle materials
- The elastic field outside an ellipsoidal inclusion
- The relation between crack growth resistance and fracture process parameters in elastic-plastic solids
- A Continuum Model for Void Nucleation by Inclusion Debonding
- Analytical derivation and investigation of the interface crack models
- Title not available (Why is that?)
- Numerical modeling of crack growth under dynamic loading conditions
- Effect on interfacial compliance on bifurcation of a layer bonded to a substrate
- Stability of solids with interfaces
Cited In (5)
- Molecular-dynamics simulation-based cohesive zone representation of intergranular fracture processes in aluminum
- Atomistic simulations of Bauschinger effects of metals with high angle and low angle grain boundaries
- Statistical volume element method for predicting microstructure-constitutive property relations
- A comparative study of fracture in Al: quantum mechanical vs. empirical atomistic description
- Dynamic phenomena and crack propagation in dissimilar elastic lattices
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