Inertial effects in the rotationally driven melt motion during the Czochralski growth of silicon crystals with a strong axial magnetic field

DOI10.1007/S000330050198zbMath0982.76098OpenAlexW2057161164MaRDI QIDQ1584710

G. Talmage, J. M. Lopez, S.-H. Shyu, John S. Walker

Publication date: 8 April 2002

Published in: ZAMP. Zeitschrift für angewandte Mathematik und Physik (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s000330050198

zbMATH Keywords

transport equationasymptotic analysisinertial effectsPoisson equationHartmann numberinteraction parametercomposite singular perturbation techniquesCzochralski growth of silicon crystalsfourth-order Adams-Bashforth-Moulton predictor-corrector methodmatrix diagonalization techniquerotationally driven melt motionstrong axial magnetic field

Mathematics Subject Classification ID

Multiphase and multicomponent flows (76T99) Finite difference methods applied to problems in fluid mechanics (76M20) Asymptotic methods, singular perturbations applied to problems in fluid mechanics (76M45) General theory of rotating fluids (76U05) Magnetohydrodynamics and electrohydrodynamics (76W05)

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