Inertial effects in the rotationally driven melt motion during the Czochralski growth of silicon crystals with a strong axial magnetic field

DOI10.1007/S000330050198zbMATH Open0982.76098OpenAlexW2057161164MaRDI QIDQ1584710FDOQ1584710

Authors: G. Talmage, S.-H. Shyu, J. M. Lopez, J. S. Walker 

Publication date: 8 April 2002

Published in: ZAMP. Zeitschrift für angewandte Mathematik und Physik (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s000330050198

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zbMATH Keywords

asymptotic analysisPoisson equationtransport equationHartmann numberinertial effectsinteraction parametercomposite singular perturbation techniquesCzochralski growth of silicon crystalsfourth-order Adams-Bashforth-Moulton predictor-corrector methodmatrix diagonalization techniquerotationally driven melt motionstrong axial magnetic field

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) General theory of rotating fluids (76U05) Magnetohydrodynamics and electrohydrodynamics (76W05) Asymptotic methods, singular perturbations applied to problems in fluid mechanics (76M45) Multiphase and multicomponent flows (76T99)

Cited In (7)

• Melt motion due to Peltier marking during Bridgman crystal growth with an axial magnetic field
• Effect of high frequency magnetic field on CZ silicon melt convection
• Numerical simulation of LEC growth of InP crystal with an axial magnetic field
• Two- and three-dimensional transient melt-flow simulation in vapour-pressure-controlled Czochralski crystal growth
• Melt motion in a Czochralski crystal puller with an axial magnetic field: isothermal motion
• One-dimensional boundary layer in the problem of floating zone melting in a magnetic field
• Melt motion in a Czochralski crystal puller with a non-uniform axisymmetric magnetic field: isothermal motion

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