Robust numerical simulation of porosity evolution in chemical vapor infiltration. I: Two space dimensions

DOI10.1006/JCPH.2000.6550MaRDI QIDQ1585367zbMATH OpenOpenAlexFDO

Authors Thomas L. Starr, Xinfu Chen, Shi Jin, Xuelei Wang

Publication date 7 May 2002

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1006/jcph.2000.6550

zbMATH Keywords

boundary value problemLaplace equationEulerian formulationlevel set equationtopological changeskinetic limitporous solidchemical vapor infiltrationgas-solid reactionsOsher-Sethian schemepore structure evolution

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Flows in porous media; filtration; seepage (76S05) Three or more component flows (76T30) Reaction effects in flows (76V05)

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Cites work

• scientific article; zbMATH DE number 3722474 (Why is no real title available?)
• scientific article; zbMATH DE number 976936 (Why is no real title available?)
• scientific article; zbMATH DE number 1181255 (Why is no real title available?)
• A numerical study of electro-migration voiding by evolving level set functions on a fixed Cartesian grid
• Fronts propagating with curvature-dependent speed: Algorithms based on Hamilton-Jacobi formulations
• Mathematical analysis and optimization of infiltration process
• The Immersed Interface Method for Elliptic Equations with Discontinuous Coefficients and Singular Sources

Cited in

(10)

• Analysis of the chemical vapor infiltration process computational experiments
• Robust numerical simulation of porosity evolution in chemical vapor infiltration. II: Two-dimensional anisotropic fronts
• Robust numerical simulation of porosity evolution in chemical vapor infiltration. III: Three space dimension.
• Microwave-enhanced chemical vapor infiltration: A sharp interface model
• Homogenization of a discrete network model for chemical vapor infiltration process
• The modeling of realistic chemical vapor infiltration/deposition reactors
• Discontinuous Galerkin solution of a phase-field model in isothermal chemical vapor infiltration of SiC
• High order anchoring and reinitialization of level set function for simulating interface motion
• Injection Vapour Model in a Porous Medium Accounting for a Weak Condensation
• scientific article; zbMATH DE number 5174792 (Why is no real title available?)

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